#define MTD_NORFLASH 3
#define MTD_NANDFLASH 4
#define MTD_DATAFLASH 6
+#define MTD_UBIVOLUME 7
#define MTD_WRITEABLE 0x400 /* Device is writeable */
#define MTD_BIT_WRITEABLE 0x800 /* Single bits can be flipped */
#define MTD_NO_ERASE 0x1000 /* No erase necessary */
-#define MTD_STUPID_LOCK 0x2000 /* Always locked after reset */
+#define MTD_POWERUP_LOCK 0x2000 /* Always locked after reset */
// Some common devices / combinations of capabilities
#define MTD_CAP_ROM 0
#define MTD_CAP_NORFLASH (MTD_WRITEABLE | MTD_BIT_WRITEABLE)
#define MTD_CAP_NANDFLASH (MTD_WRITEABLE)
-
-// Types of automatic ECC/Checksum available
-#define MTD_ECC_NONE 0 // No automatic ECC available
-#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
-#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
-
/* ECC byte placement */
#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
uint32_t erasesize;
uint32_t writesize;
uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
+ /* The below two fields are obsolete and broken, do not use them
+ * (TODO: remove at some point) */
uint32_t ecctype;
uint32_t eccsize;
};